III-Nitride-Based Devices Grown With Relaxed Active Region

Researchers at the University of California, Santa Barbara have fabricated III-nitride-based devices with a relaxed active region that improve on the crystal quality, defect density, and surface morphology of previous demonstrations. This technology us…
Researchers at the University of California, Santa Barbara have fabricated III-nitride-based devices with a relaxed active region that improve on the crystal quality, defect density, and surface morphology of previous demonstrations. This technology uses a thin thermally decomposed InGaN underlayer and a thin GaN or InGaN decomposition stop layer as the strain compliant layer. These novel components improve the crystal quality, reduce defects, improve surface morphologies, and ultimately enhance the final electrical and optical properties of the device. In addition, growing a relaxed active region will minimize the compositional pulling effect, which will allow for higher temperature quantum well growth and higher efficiency for long wavelength emitting devices.

Website

https://techtransfer.universityofcalifornia.edu/NCD/32662.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_32662&utm_campaign=TechWebsite

Advantages

  • Enhances key device performance with improvements to crystal quality, defect density, surface morphology and growth temperature
  • Increases efficiency in long-wavelength devices

Potential Applications

  • LEDs, micro-LEDs and Laser Diodes
    • Augmented/virtual reality
    • High-resolution displays

Contact Information

  • Name: Sherylle Mills Englander
  • Title :
  • Department :
  • Email: englander@tia.ucsb.edu
  • Phone: 805-893-5196
  • Address :