III-Nitride-Based Devices Grown On Thin Template On Thermally Decomposed Material

Researchers at the University of California, Santa Barbara have developed highly efficient III-nitride devices with high-quality, long-wavelength active regions. This technology relaxes a large-area buffer layer across an entire substrate in a single g…
Researchers at the University of California, Santa Barbara have developed highly efficient III-nitride devices with high-quality, long-wavelength active regions. This technology relaxes a large-area buffer layer across an entire substrate in a single growth with no other processing required. A high growth temperature of 870°C improves Indium incorporation and results in the highest-available crystal quality of InGaN and AlGaN layers; nearly three times higher than current market offerings. This technology has much higher relaxation (85%) across the whole area of the InGaN layer grown on a 2-inch substrate compared to traditionally relaxed regions that are less than 10 μm2. This simpler cost-effective approach to growing smaller LED and LDs in a single MOCVD step can be applied to any III-nitride devices, such as electronic devices, high frequency devices, HEMTs, FETs, various detectors, and even solar cells.

سایت اینترنتی

https://techtransfer.universityofcalifornia.edu/NCD/32660.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_32660&utm_campaign=TechWebsites

مزایای

  • Efficient long-wavelength LEDs
  • High InGaN relaxation (biaxially 85% relaxed) compared to InGaN grown on porous GaN (uniaxially 40~50%)
  • Higher growth temperature resulting in market-leading crystal quality

برنامه های کاربردی بالقوه

  • LEDs, micro-LEDs and Laser Diodes
  • RF devices
  • HEMTs
  • FETs
  • Solar cells

اطلاعات تماس

  • نام: Sherylle Mills Englander
  • Title :
  • Department :
  • پست الکترونیک: englander@tia.ucsb.edu
  • تلفن: 805-893-5196
  • Address :