High Efficiency III-Nitride Devices with Smooth Relaxed InGaN Buffer and Strain Compliant Template

Researchers at the University of California, Santa Barbara have improved the efficiency of red InGaN emitters by growing smooth buffer layers on mechanically flexible strain compliant templates (SCTs) for III-nitride based devices. This technology produces a smooth surface morphology on the InGaN buffer layer and top surface of each device, improving the crystal quality of the SCT and providing better metal contact for n- and p-type layers. These improvements translate to increased external quantum efficiencies (EQE), which is especially welcome in red light-emitting devices.  Higher crystal film quality, lower defects, and higher EQE in LEDs and laser diodes (LDs) are necessary improvements for pioneering the next generation of display technology.