Researchers at the University of California, Santa Barbara have improved the efficiency of red InGaN emitters by growing smooth buffer layers on mechanically flexible strain compliant templates (SCTs) for III-nitride based devices. This technology produces a smooth surface morphology on the InGaN buffer layer and top surface of each device, improving the crystal quality of the SCT and providing better metal contact for n- and p-type layers. These improvements translate to increased external quantum efficiencies (EQE), which is especially welcome in red light-emitting devices. Higher crystal film quality, lower defects, and higher EQE in LEDs and laser diodes (LDs) are necessary improvements for pioneering the next generation of display technology.
Website
Advantages
- Higher external quantum efficiency (EQE) in III-nitride devices
- Fewer defects
Potential Applications
- LEDs and LDs
- Near eye technologies (VR/AR)
- Micro-LED displays
Contact Information
- Name : Sherylle Mills Englander
- Title :
- Department :
- Email : englander@tia.ucsb.edu
- Phone : 805-893-5196
- Address :