Engineering of V-Defects for Efficient III-Nitride LEDs

Researchers at the University of California, Santa Barbara have created an engineered structure that tunes intentional V-defects to optimize lateral hole injection in GaN-based LEDs and laser diodes (LDs). This structure reduces and/or eliminates sidew…
Researchers at the University of California, Santa Barbara have created an engineered structure that tunes intentional V-defects to optimize lateral hole injection in GaN-based LEDs and laser diodes (LDs). This structure reduces and/or eliminates sidewall barriers to ensure volumetric injection in the whole quantum well (QW) stack. Unlike standard QW stacks, this invention leverages different compositions and thicknesses of QWs to circumvent the issue of preferential hole injection into the lowest energy QWs. Additionally, this technology enables white LEDs with a higher color-rendering index on a single wafer with a higher modulation bandwidth. This technology can be applied to other III-nitride light emitting structures such as micro-LEDs, UV LEDs, or lasers.

Website

https://techtransfer.universityofcalifornia.edu/NCD/32659.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_32659&utm_campaign=TechWebsites

Advantages

  • Improves efficiency in high-power LEDs
  • Enables wider active regions with large QW numbers
  • Produces higher modulation bandwidth for white LEDs 
  • Easily scaled with standard industrial equipment and procedures
  • Compatible with all wavelength LEDs and LDs

Potential Applications

  • III-nitride emitters
    • LEDs and micro-LEDs
    • UV LEDs
    • Laser Diodes

Contact Information

  • Name: Sherylle Mills Englander
  • Title :
  • Department :
  • Email: englander@tia.ucsb.edu
  • Phone: 805-893-5196
  • Address :