Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation

Researchers at the University of California, Santa Barbara have minimized or entirely prevented the formation of misfit dislocations at the interface of the heterostructure of III-V compound-based devices — even those grown under large lattice mi…
Researchers at the University of California, Santa Barbara have minimized or entirely prevented the formation of misfit dislocations at the interface of the heterostructure of III-V compound-based devices — even those grown under large lattice mismatch conditions. Unlike traditional methods of growing GaAs on a Si substrate, GaAs is grown on or above a decomposition stop layer of a thin flexible Si layer, where the GaAs is partially relaxed or free relaxed without the formation of misfit dislocations. Thus, both device lifetime and efficiency are improved drastically, with the opportunity to develop noble devices because the heterostructure is grown under a relatively large lattice mismatch condition. This technology enhances the performance and crystal quality of all III-V and II-VI compound-based devices for applications in automobiles, optical integrated circuits (ICs), power grids, computers, robots, smartphones, displays, and more. 

Website

https://techtransfer.universityofcalifornia.edu/NCD/32661.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_32661&utm_campaign=TechWebsites

Advantages

  • Minimizes or entirely prevents the formation of misfit dislocations 
  • Wider available emission wavelength range
  • Fabricated with common methods

Potential Applications

  • III-V compound devices
    • LED
    • Laser diodes
    • Electronics

Contact Information

  • Name: Sherylle Mills Englander
  • Title :
  • Department :
  • Email: englander@tia.ucsb.edu
  • Phone: 805-893-5196
  • Address :