The proposed invention represents a class of vertically-integrated epitaxial semiconductor/superconductor heterostructures that comprise the necessary components of the quantum computer and thus enable integrated on-chip quantum computing at mK temperatures. The engineered epitaxial nitride heterostructure of GaN and NbN allows for simultaneous occurrence of superconductivity and quantum Hall effect.
In the proposed epitaxial heterostructure, the semiconductor 2D electron gas (2DEG) of the high electron mobility transistor (HEMT) exhibits the integer quantum Hall effect (IQHE) in a regime where the underlying, spatially separated superconductor retains its superconducting properties. It has been demonstrated that a strong and clean IQHE can be obtained with the proposed modified epitaxial growth process. The improvements enable two phenomena, IQHE, and superconductivity, to simultaneously occur in a single nanoscale device over a narrow range of temperatures and magnetic fields.
The GaN system has demonstrated among the lowest contact resistances of all semiconductors. The NBN system remains superconducting when the gate voltage, assisted by a magnetic field, puts the 2DEG into an IQHE state. The proposed epitaxial structures have advantages in their excellent scalability, higher crystalline quality, and lower interfacial impurities. In addition, the vertical integration enabled by epitaxy and the 2DEG location engineering enabled by polarity control in the nitride heterostructures allows for more geometries and flexibility in devices.
- An industrially viable platform for robust quantum devices that exploit topologically protected transport
- Miniaturized quantum computers with microscopic components on a single chip
Name: Martin Teschl
Phone: (607) 254-4454