2022-078 – Silicon Carbide Nanosheets Transistors

Background
Silicon Carbide (SiC) is a leading, transformative semiconductor technology, enabling innovation across several strategic applications including all-electric transportation, renewable energy (such as power converters for solar energy), datacenters, and industrial and consumer applications. Owing to its unique physical and chemical properties such as large bandgap, and high-thermal capabilities, SiC offers several benefits over silicon when incorporated into semiconductor devices, as it enables high power, high temperature, high voltage applications (e.g. fast charging of electric vehicles) in addition to reducing the size of components, like inductors, capacitors, filters & transformers. Overall, these characteristics enable lower switching and conduction losses with higher blocking voltages and avalanche capability. Even with these advantages, SiC MOSFETS do have their limitations, including power loss due to the on-state resistance, and quality of materials. Thus, there is a need for high-performing materials more ideally suited for the next generation of semiconductor advances.

Technology Description
A researcher in the University of New Mexico’s department of Mechanical Engineering has proposed a revolutionary advancement for SiC materials, by incorporating SiC nanosheets (or 2D SiC) as a channel layer in field effect transistors. Due to their ultimate thinness and unprecedented physical and structural properties, 2D SiC channel materials are ideally suited to solve the pitfalls mentioned above. The use of SiC nanosheets as a channel material will significantly reduce on-resistance and improve charge mobility and power efficiency in power devices. Additionally, as shrinking transistors demand thinner materials, the use of 2D SiC offers a tremendous opportunity for the next generation of semiconductors.

Contact Information

Name: Andrew Roerick

Email: aroerick@innovations.unm.edu

Phone: 505-277-0608