2018 – Rubbing-Induced Site-Selective Growth (RISS) of Device Patterns

MoS2site-selective growthtransistors and memristors
  • MoS2
  • site-selective growth
  • transistors and memristors


Emerging low-dimensional nanomaterials (such as 2D materials) have provided new opportunities in making electronic and optoelectronic devices. To manufacture commercially viable devices/systems based on such nanomaterials, conventional resist-based lithography and plasma-based etching processes need to be performed to pattern the raw material films into orderly arranged device patterns. Such conventional patterning processes can inevitably introduce serious contamination and damage to the patterned materials and therefore result in inconsistent electronic properties. The current industry-standard cleaning processes (e.g., RCA and Pirahna methods) cannot be applied to low-dimensional nanomaterials because these cleaning processes can always lead to detrimental damage to the atomically-thin structures of nanomaterials. To address this manufacturing-related issue, we invented a patterning approach capable of directly generating device patterns of nanomaterials without additional resist-based lithography and etching processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating triboelectric charge patterns on a dielectric surface, and (ii) site-selective chemical vapor deposition of target nanomaterials (e.g., 2D materials) within rubbing-induced charge patterns. Using this rubbing-induced site-selective growth (RISS) method, we have experimentally demonstrated the production of MoS2 lines over large areas as well as arrays of field-effect transistors and memristors.




-Removes the need to use conventional resist-based photolithography methods for substrate patterning, which may leave deleterious debris behind following the development of the substrate

-The methodology is scalable for industrial production as it relies solely on conventional industrial techniques like mechanical rubbing and chemical vapor deposition.

Potential Applications:

-Production of electrical components such as thin-film transistors, memristors, and multiplexing biosensors

-Potentially useful in the design and fabrication of semiconductor integrated circuits and microprocessors

-Light-emitting properties of molybdenite thin films coupled with favorable electronic properties may make them useful in next-generation display technologies, such as LEDs

-Paired with other two-dimensional materials like graphene, these hybrid materials may be useful in the design of improved lithium-ion batteries and other energy applications

Contact Information:

  • Name: Joohee Kim
  • Title :
  • Department :
  • Email : jooheek@umich.edu
  • Phone : (734) 647-5730
  • Address :